TYPE:indepth

In-depth News Analysis

Analog Devices and Hittite - what next?

Cree readies GaN for low-cost markets

Perfecting the VCSEL production line

Graphene: opening the bandgap

Multi-junction solar cells to push CPV efficiencies beyond 50%

MOCVD players: growth at last

Cree: Fading out?

Commercial GaN: MA COM is ready and waiting

GaN Systems readies for market

Emcore primes cells for NASA and beyond

LEDs: China readies for global domination

GaN takes a new line of defence

CMOS challenges SiGe radar chips

RFMD-TriQuint: Now what?

Move over GaAs?

Kyma reveals ammonothermal-HVPE GaN growth plans

IGBT inventor crusades wide bandgap semiconductors

Cree: from hope to hit?

Rubicon reveals sapphire plans

GaN-on-silicon LEDs slated for massive market growth

Uncovering the secrets of high-performance green lasers

GaN growth: an extra inch

GaN advances into defence electronics

Bulk GaN: too little, too late?

Simplifying gold-free technology for nitride HEMTs

New GaN centre to drive devices to market

CPV: the French focus

Vertical LEDs ready for market

II-VI lays out Oclaro plans

Sunset for silicon?

Imec reveals germanium-tin transistors

Seren moves on

Osram cranks up the output power of green and blue lasers

GaN-on-silicon LEDs are catching incumbents

Sapphire substrates to lead future LED markets

Plessey thrusts LEDs into the market

The rise and rise of Infinera

Eastern promise?

Raytheon primes GaN for electronic warfare

Silicon carbide-on-silicon edges closer to LEDs

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