TYPE:features

Features

Reducing initial failures in GaN-on-GaN vertical diodes

The worlds first monolithic full-colour LED

SOI: A great foundation for the GaN HEMT

Nanowires enhance laser performance in the deep UV

Pushing the GaN HEMT towards its theoretical limit

The attractive attributes of atomic layer deposition

Adding colour to future silicon ICs

Solar cells: Taking efficiency to new highs

Uncovering the origin of thermal droop

Advancing wireless with the digital GaN PA

InGaAs finFETs for future CMOS

Exposing pollutants with GaN HEMTs

Getting the GaN VCSEL to market

LED droop: The role of the phosphor

GaN gets set for mainstream adoption into RF energy markets

TUNNEL FETs: The key to greener microprocessors

Slashing the cost of the GaN substrate

Boosting brightness with hollow cavities

Demonstrating the capability of GaN HEMTs for satellite communication

Mist Epitaxy: The key to a great gallium oxide power device

Eradicating errors in GaAs fabs

Veeco: Taking red, orange and yellow LEDs and optoelectronics to the next level

Pursuing high-efficiency photovoltaics with novel alloys

Sapphire substrates slash the cost of deep UV lasers

The superiority of single-wafer systems

Delivering multi-band detection with heterogeneous arrays

PICs: Options for lighting up the chip

Shares: go go Oclaro

Refining chip manufacturing with wafer carrier monitoring

Quantum well intermixing: The quest for orange and yellow lasers

A critical look at InGaAs MOSFETs

Quantum tunneling boosts UV LED efficiency

5G the precarious promise

Dissecting prospects for CS industry

Driving diversification in GaN device production

5G increases compound semiconductor demand - raising challenge from silicon

LEDs: The compelling case for GaN-on-silicon

The promise of truly two-dimensional transistors

Targeting radar with 150 V RF GaN HEMTs

Simplifying power conversion with medium voltage SiC MOSFETs

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