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Avaco Hikes Conversion Efficiency By 30 Percent In CIGS Solar Cells

20th October 2013
Avaco has developed a new concept of buffer layer deposition for photovoltaic products.


By using Avaco’s atomic layer deposition (ALD) process, the energy conversion efficiency improved to approximately 30 percent higher than the conventional CIGS solar cell that uses CdS for the buffer layer.


The new process enhanced quantum efficiency in both the short wavelength range and near infrared range.


The quantum jump in the short circuit current improvement in the I-V curve contributed to higher efficiency CIGS solar cell without affecting the open circuit voltage, Voc. What’s more, Avaco has confirmed that its new buffer layer deposition technique can be applied to a wide range of CIGS absorbers regardless of the preparation methods.


"We are pleased with the latest ALD addition in our system product portfolio,” says Chuck Kim, business development director of Avaco, “Expansion of our core technology further strengthens and broadens our offering of deposition process solutions enabling Avaco to continue to provide our customers with innovative and leading-edge technology solutions to address today's manufacturing challenges."


Avaco will be showcasing its products at booth #751, and/or education poster presentation at booth #4806 at Solar Power International (SPI) 2013 in Chicago.


Avaco, a publicly traded company headquartered in Daegu, South Korea , is a global supplier of thin-film processing equipment and specialises in the manufacture of sputtering (PVD) vacuum deposition equipment (in-line, cluster, and roll to roll type), ALD equipment, various BEOL equipment, and factory automation equipment such as clean stocker, clean crane, and overhead transfer system for large-scale substrates.


Avaco is known for delivering mass production manufacturing equipment that encompasses all aspects related to thin-film coating such as TCO, metal electrode, and dielectric layer.


The firm uses many target materials for its sputtering system. These include Ag, AGZO, Al, Al2O3, AlNd, AZO, CIGS, Cr, Cu, CuGa, CuIn, GZO, IGZO, In, ITO, IZO, Mo, MoTi, MoW, Ni, Se, SiO2, TiO2, ZnO and others with DC, pulsed-DC, and MF utilising a single or dual magnetron source.





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