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Microsemi launches new family of SiC MOSFETs for high-voltage andustrial applications

New SiC MOSFETs complemented with SiC power modules, significantly improving system efficiency in high-voltage applications and delivering maximum power efficiency to help customers develop lighter, smaller, more reliable system designs

Microsemi Corporation a provider of semiconductor solutions differentiated by power, security, reliability and performance, have introduced its new silicon carbide  MOSFET product family with new 1200 volt (V) solutions. The new SiC MOSFETs are designed for high-power industrial applications where efficiency is critical. These applications include solutions for solar inverters, electric vehicles, welding and medical devices. Microsemi is positioned to capitalize on SiC semiconductor market growth. Market researcher Yole Développement estimates that the SiC power semiconductor market will grow 39 percent year-over-year from 2015 to 2020, and Market Research estimates the SiC semiconductor market will grow 38 percent year-over-year to $5.3 billion by 2022. New SiC MOSFETs The new SiC MOSFETs provide patented technology from Microsemi and are designed to help customers develop solutions that operate at higher frequency and improve system efficiency. Microsemi's patented SiC MOSFET technology features include: Best-in-class RDS(on) vs. temperature Ultra-low gate resistance for minimizing switching energy loss Superior maximum switching frequency Outstanding ruggedness with superior short circuit withstand "Microsemi's 1200V SiC MOSFETs are establishing a new benchmark for performance," said Marc Vandenberg, general manager for Microsemi's Power Products Group. "Microsemi continues to expand its SiC product portfolio by capitalizing on our in-house SiC fabrication capabilities and delivering innovative high-power solutions to our customers." Microsemi's 1200V SiC MOSFETs are rated at 80 milliohms and 50 milliohms and provide customers more development flexibility by offering both industry standard TO-247 and SOT-227 packages:

APT40SM120B - 1200V, 80milliohm, 40A, TO-247 package

APT40SM120J - 1200V, 80milliohm, 40A, SOT-227 package

APT50SM120B - 1200V, 50milliohm, 50A, TO-247 package

APT50SM120J - 1200V, 50milliohm, 50A, SOT-227 package For more information on the SiC MOSFETs visit www.microsemi.com/sicmosfets New SiC MOSFET Power Modules SiC MOSFETs are also integrated into the company's expanded MOSFET power modules, which are used in battery charging, aerospace, solar, welding and other high-power industrial applications. The new power modules provide higher frequency operation and improve system efficiency. For more information, visit www.microsemi.com/sicpowermodules. New 1700V Schottky Diodes Microsemi's SiC MOSFETs are also complimented by Microsemi's complete product line of SiC Schottky Diodes. The new 1700V SiC Schottky Diode expands the line beyond the 1200V and 650V. These products are designed with superior passivation technology for ruggedness in outdoor and humid applications. For more information, visit www.microsemi.com/sicdiodes.

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