ISO Compound Semiconductor - News

Bulk GaN: Ammonothermal trumps HVPE

1st March 2010
Today’s GaN substrates are manufactured by a HVPE process that requires high temperatures and substantial reactor maintenance. Ammonothermal growth can address both these issues, while producing material with far fewer dislocations in a more efficient manner, says Ammono’s Robert Dwilinski, Roman Doradzinski and Marcin Zajac.

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