EpiGaN to exhibit 200mm GaN-on-silicon Epi Wafers

15th May 2017
Latest technology targets 650V power switching and RF power applications


EpiGaN will show the latest enhancements of its GaN-on-silicon epi-wafer family for 650V power switching and RF power applications at PCIM Europe 2017 in Nuremberg, Germany (May 16-18, 2017) and CSMantech in Indian Wells, California, USA (May 22-14, 2017).

Drawing on its experience in making GaN-on-Si and GaN-on-SiC materials for high-performance power switching and mm-wave power devices, EpiGaN says it is now leading the way to define epi-wafer material quality for device properties that cut conversion losses and increase reliability.

For 650V power management and RF power systems, EpiGaN has recently scaled its GaN-on-silicon technology up to 200mm for economies of scale to enter the mainstream CMOS manufacturing lines of  silcion-based IDMs and foundries.

For instance, it now has 200mm versions of its HV650V and HVRF GaN-on-silicon epi-wafers. The HV650V RF power products are noted for their excellent dynamic behaviour and the and HVRF product family for it low RF losses (<0.5dB/mm up to 50GHz).

An important competitive advantage of EpiGaN's GaN-on-silicon epi-wafer technology is said to be the in-situ SiN capping layer. This special feature provides superior surface passivation and device reliability, and it enables contamination-free processing in existing standard Si-CMOS production infrastructures. 

In-situ SiN structuring also allows the use of pure AlN layers as barrier materials, which results in lower conduction losses and/or allows the design of smaller-size chips of the same current rating. 

"GaN technology has begun to enter many applications, either in power switching or in RF power amplification," says EpiGaN cofounder and CEO Marianne Germain. "We are particularly proud to have developed GaN-on-Si epi-wafers that show the lowest RF loss up to 100GHz. This is a timely answer to the increasing demands in wireless communication such as the introduction of 5G and the Internet of Things.“

At PCIM Europe, Germain will participate in the panel discussion 'GaN - Design, EMC and Measurement' at the Fach Forum, organised by Bodo’s Power Systems (May 17). Markus Behet, EpiGaN CMO, will give a presentation entitled 'From Hype to Reality: GaN/Si - Where Are We Today?' at the PCIM Europe Exhibitor Forum (May 18) and the CSMantech Exhibitor Forum (May 23).

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