STMicro announces range of 1200V SiC Diodes

10th May 2017
Junction Barrier Schottky family brings SiC benefits to wide range of applications


STMicroelectronics has announced a full range of 2A-40A 1200V SiC JBS (Junction Barrier Schottky) diodes designed to bring the benefits of SiC’s high switching efficiency, fast recovery, and consistent temperature characteristics to a wide range of applications.

ST says that its SiC-diode manufacturing process creates robust devices with best-in-class forward voltage (lowest VF), giving circuit designers extra freedom to achieve high efficiency and reliability using diodes with lower current rating and therefore lower cost. This makes SiC technology more accessible for cost-conscious applications including solar inverters, industrial motor drives, home appliances, and power adapters.

At the same time, performance-oriented applications that demand SiC for superior efficiency, low weight, small size, or best thermal properties can extend these advantages using ST’s latest 1200V SiC diodes, according to ST. 

The higher efficiency margin provided by their lower forward voltage drop (VF) delivers important benefits for automotive equipment such as On-Board Battery Chargers (OBC) and charging stations for Plug-In Hybrid or Electric Vehicles (PHEV/EV). On the other hand, overall robust electrical performance ensures a perfect fit in telecom and server power supplies, high-power industrial Switched-Mode Power Supplies (SMPS) and motor drives, uninterruptible power supplies (UPS), and large solar inverters.

Achieving the lowest VF also helps reduce operating temperature and extend application lifetime.

ST’s new 1200V SiC diode family covers current ratings from 2A to 40A, including automotive-qualified devices, in surface-mount DPAK HV (High-Voltage) and D2PAK, or through-hole TO-220AC and TO-247LL (Long-Lead) packages.

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