EPC halves size of eGaN FETs

15th March 2017
New GaN transistors widen performance and cost gap compared to equivalent silicon devices

Efficient Power Conversion (EPC) says it has increased performance while lowering the cost of off-the-shelf GaN transistors with the introduction of its latest two eGaN FETs.

Applications for the 7mΩ, 100V EPC2045 include single stage 48V to load Open Rack server architectures, point-of-load converters, USB-C, and LiDAR. The 10mΩ, 200V EPC2047 is suitable for wireless charging, multi-level AC-DC power supplies, robotics, and solar micro inverters.

Widening the performance/cost gap with equivalent silicon power transistors, the 100V, 7mΩ EPC2045, cuts the die size in half compared to the prior-generation EPC2001C eGaN FET. The 200V, 10mΩ EPC2047 eGaN FET also cuts the size in half so that it is now about 15 times smaller than equivalently rated silicon MOSFETs.

The chip-scale packaging of eGaN products is said to handle thermal conditions far better than the plastic packaged MOSFETs since the heat is dissipated directly to the environment, whereas the heat from the MOSFET die is held within a plastic package.

Alex Lidow, EPC’s co-founder and CEO commented, “We are very excited about how our innovative GaN technology used in the development of these eGaN FETs is changing the industry.”

He added: “These new products demonstrate how EPC and GaN transistor technology is increasing the performance and reducing the cost of eGaN devices forapplications currently being served by MOSFETs. Further, advancements in EPC’s GaN technologywill continue to enable new end-use applications that go beyond the capability of silicon devices. These products are evidence that the performance and cost gap with MOSFET technology continues to widen.”

There are three development boards available to support easy in-circuit performance evaluation of the EPC2045 and the EPC2047 respectively. The EPC9078 and EPC9080 support the 100 V EPC2045, whereas the EPC9081 features the 200 V EPC2047.

The performance, size, and cost improvement evidenced in these new products were made possible by an innovative method of both reducing the electric fields in the drain region during breakdown, and significantly reducing the number of traps that could cause electrons to become inactive.

Low volume pricing for the EPC2045 100 V, 7 mΩ product at 1K units is $2.66 each, and low volume pricing for the EPC2047 200 V, 10 mΩ product at 1K units is $4.63 each. The development boards are priced at $118.25 each.

Share this story

CS Awards winners 2016

Corporate Partners

Media Sponsors

http://www.techweekeurope.co.uk/


X