Please send your Technical Papers to Stephen@angelbc.co.uk, +44 (0)2476 718 970 for consideration to be included in this section. All technical papers must be supplied in Microsoft Word or pdf documents.

Positioning effects on quantum dot solar cells grown by molecular beam epitaxy - Applied Physics Letters
Mar 09, 2010
Graphene growth by molecular beam epitaxy using a solid carbon source - Wiley InterScience
Mar 09, 2010
ZnO:Sb/ZnO:Ga Light Emitting Diode on c-Plane Sapphire by Molecular Beam Epitaxy - Applied Physics Express
Mar 08, 2010
Passive and Hybrid Mode-Locking of an External-Cavity GaInN Laser Diode Incorporating a Strong Saturable Absorber - Applied Physics Express
Mar 08, 2010
222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties - Applied Physics Express
Mar 08, 2010
High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes: Comparison of Extraction Lengths between Surface and Embedded Photonic Crystal - Applied Physics Express
Mar 08, 2010
Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer - APEX: Applied Physics Express
Feb 26, 2010
An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process - APEX: Applied Physics Express
Feb 26, 2010
Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes - APEX: Applied Physics Express
Feb 26, 2010
High Resolution Imaging of Electrical Properties of a 2-Inch-Diameter Gallium Nitride Wafer Using Frequency-Agile Terahertz Waves - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Effect of Al_{0.06}Ga_{0.94}N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/Ga - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Strain Effects on Exciton Transition in CdTe Films on GaAs(100) Substrates - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Do Sidewall Quantum Wells Exist in GaInN-Based Light-Emitting Diodes? - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Superconductivity of FeSe_{0.5}Te_{0.5} Thin Films Grown by Pulsed Laser Deposition - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Demonstration of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on High-Quality AlN Templates - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-Doping Controlled Rapid Melting Growth - APEX: Applied Physics Express
Feb 19, 2010
Rotation monitoring in AIX 200 and AIX 200/4 reactors by EpiRAS®TT - Laytec
Feb 18, 2010
Semiconducting Electronic Structure of Graphene Adsorbed on Insulating Substrate - Japanese Journal of Applied Physics (JJAP)
Feb 16, 2010

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