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TECHNICAL PAPERS

Please send your Technical Papers to Stephen@angelbc.co.uk, +44 (0)2476 718 970 for consideration to be included in this section. All technical papers must be supplied in Microsoft Word or pdf documents.

New White Paper - Nanoscale Etching in Inductively Coupled Plasmas - Oxford Instruments
Growth of platinum films by atomic layer deposition (ALD) - Oxford Instruments
LED Production on a SUSS MA100e Gen2 Mask Aligner - SUSS MicroTec Lithography GmbH
Positioning effects on quantum dot solar cells grown by molecular beam epitaxy - Applied Physics Letters
Graphene growth by molecular beam epitaxy using a solid carbon source - Wiley InterScience
ZnO:Sb/ZnO:Ga Light Emitting Diode on c-Plane Sapphire by Molecular Beam Epitaxy - Applied Physics Express
Passive and Hybrid Mode-Locking of an External-Cavity GaInN Laser Diode Incorporating a Strong Saturable Absorber - Applied Physics Express
222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties - Applied Physics Express
High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes: Comparison of Extraction Lengths between Surface and Embedded Photonic Crystal - Applied Physics Express
Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer - APEX: Applied Physics Express
An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process - APEX: Applied Physics Express
Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes - APEX: Applied Physics Express
High Resolution Imaging of Electrical Properties of a 2-Inch-Diameter Gallium Nitride Wafer Using Frequency-Agile Terahertz Waves - Japanese Journal of Applied Physics (JJAP)
Effect of Al_{0.06}Ga_{0.94}N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/Ga - Japanese Journal of Applied Physics (JJAP)
Strain Effects on Exciton Transition in CdTe Films on GaAs(100) Substrates - Japanese Journal of Applied Physics (JJAP)
Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes - Japanese Journal of Applied Physics (JJAP)
Do Sidewall Quantum Wells Exist in GaInN-Based Light-Emitting Diodes? - Japanese Journal of Applied Physics (JJAP)
High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes - Japanese Journal of Applied Physics (JJAP)
Superconductivity of FeSe_{0.5}Te_{0.5} Thin Films Grown by Pulsed Laser Deposition - Japanese Journal of Applied Physics (JJAP)
Demonstration of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on High-Quality AlN Templates - Japanese Journal of Applied Physics (JJAP)

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