Please send your Technical Papers to Stephen@angelbc.co.uk, +44 (0)2476 718 970 for consideration to be included in this section. All technical papers must be supplied in Microsoft Word or pdf documents.

LED Production on a SUSS MA100e Gen2 Mask Aligner - SUSS MicroTec Lithography GmbH
July 14, 2010
Positioning effects on quantum dot solar cells grown by molecular beam epitaxy - Applied Physics Letters
Mar 09, 2010
Graphene growth by molecular beam epitaxy using a solid carbon source - Wiley InterScience
Mar 09, 2010
ZnO:Sb/ZnO:Ga Light Emitting Diode on c-Plane Sapphire by Molecular Beam Epitaxy - Applied Physics Express
Mar 08, 2010
Passive and Hybrid Mode-Locking of an External-Cavity GaInN Laser Diode Incorporating a Strong Saturable Absorber - Applied Physics Express
Mar 08, 2010
222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties - Applied Physics Express
Mar 08, 2010
High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes: Comparison of Extraction Lengths between Surface and Embedded Photonic Crystal - Applied Physics Express
Mar 08, 2010
Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer - APEX: Applied Physics Express
Feb 26, 2010
An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process - APEX: Applied Physics Express
Feb 26, 2010
Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes - APEX: Applied Physics Express
Feb 26, 2010
High Resolution Imaging of Electrical Properties of a 2-Inch-Diameter Gallium Nitride Wafer Using Frequency-Agile Terahertz Waves - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Effect of Al_{0.06}Ga_{0.94}N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/Ga - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Strain Effects on Exciton Transition in CdTe Films on GaAs(100) Substrates - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Do Sidewall Quantum Wells Exist in GaInN-Based Light-Emitting Diodes? - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
High-Efficiency InGaN-Based Yellow-Green Light-Emitting Diodes - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Superconductivity of FeSe_{0.5}Te_{0.5} Thin Films Grown by Pulsed Laser Deposition - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
Demonstration of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on High-Quality AlN Templates - Japanese Journal of Applied Physics (JJAP)
Feb 23, 2010
High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-Doping Controlled Rapid Melting Growth - APEX: Applied Physics Express
Feb 19, 2010
Rotation monitoring in AIX 200 and AIX 200/4 reactors by EpiRAS®TT - Laytec
Feb 18, 2010

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