News alerts

CONNECTING THE COMPOUND
SEMICONDUCTOR COMMUNITY

 
 
 
     
 
  The most respected, authoritative and widely read  magazine connecting the Compound Semiconductor Community since 1995
www.compoundsemiconductor.net
Follow us on Twitter
 
http://www.linkedin.com/groups/CompoundSemiconductornet-3764817?goback=.gmp_3764817
 
 
     
 
 

sponsor's message

 
 
 

Agilent Technologies
Stop Struggling with High-Voltage Capacitance Measurement!

The Agilent B1505A can directly measure junction capacitances at up to 3000 V. Download our new application note today to learn how the B1505A can solve this as well as many other difficult high-power device testing challenges.

Agilent

 
     
 

LATEST INDUSTRY NEWS - view all

 
 

 

 

Lumileds Leads LED Lighting to "Freedom From Binning" - Feb 23, 2011
New advances promising an unsurpassed quality of light, will dramatically simplify the design process for...

DOTFIVE Demonstrates Si-Ge HBTs with Highest Operation Frequency - Feb 23, 2011
The highly integrated DOTFIVE chips-set includes all required circuitry and the technology could be a...

Cree LED Lamp Raises the Bar for Colour Rendering - Feb 22, 2011
The LBR-30 retrofit lamp installs into track or recessed fixtures and is available in flood...

Osram Multi ChipLEDs Produce Picture-Perfect Images - Feb 22, 2011
Osram says displays using its LEDs produced using Thinfilm or ThinGaN technology raise image quality...

Ubilux to Boost Capacity for GaN LEDs with Aixtron Tools - Feb 22, 2011
The Taiwanese LED chip maker is adding another two CRIUS II systems to its current...

2010 Worldwide HBLED Market Grew 93 % - Feb 22, 2011
Strategies Unlimited says LED luminaire design, not performance, was the primary concern for the lighting...

Sulfurcell Commercial CIGSe Module Achieves 12.6% Efficiency - Feb 18, 2011
With the acquisition of additional CIGSe equipment and ongoing R&D work, the firm is targeting...

Market for LED Luminaires Over $3.8 Billion in 2010 - Feb 18, 2011
Strategies Unlimited says that growth rates among applications vary, but the global market for LED...

Monocrystal Advances into the Land of 8-inch Sapphire - Feb 18, 2011
Leading global LED manufacturers are moving towards 8" sapphire substrates to make their devices....

Roled Recognises FLS Lumileds Powered LEDs - Feb 17, 2011
Roled has awarded Future Lighting Solutions with "Outstanding Supplier for 2010"....

ISCAS Orders Two Aixtron MOCVD Tools for GaN Device Growth - Feb 17, 2011
The 3x2-inch and 8x3-inch reactors will be used for the manufacture of electronic devices and...

 

LATEST COMPANY NEWS - view all

 
 

 

 

Lumileds LUXEON S Delivers Punch & Colour Quality at 1300 Lumens - Feb 23, 2011
The company hopes the LUXEON S will be the major replacement for halogen and CDM...

Cree Reveals XLamp MT-G LED with Unprecedented Performance - Feb 22, 2011
The new design should enable customers to address high-output halogen retrofits for use in many...

EV Expands Portfolio with Mask Aligner for HB-LED Production - Feb 22, 2011
The firm says the fully automated EVG620HBL system delivers the highest-in-class throughput and yield to...

LayTec Makes the Move from GmBH to AG Company - Feb 21, 2011
The conversion will give LayTec AG an even wider range of options for further company...

Advanced Photonix Will Not Comment on Unusual Market Activity - Feb 21, 2011
With a jump in share price of over 23% from 16th to 17th Feb, over...

Agilent
 

LATEST LAB & FAB TALK NEWS - view all

 
 

 

 

DOTFIVE Demonstrates Si-Ge HBTs with Highest Operation Frequency - Feb 23, 2011
The highly integrated DOTFIVE chips-set includes all required circuitry and the technology could be a...

Electron Leakage can improve Efficiency Droop - Feb 11, 2011
A team from Chang Gung University says efficiency droop is probably dominated by the injection...

III-V nanolasers on Silicon Pave Way for On-Chip Photonics - Feb 07, 2011
This technique may provide a powerful and new avenue for engineering on-chip nanophotonic devices such...

New insight into the efficiency droop of GaN-based LEDs - Feb 04, 2011
Theorists argue that electron overflow, the primary cause of LED droop, is sensitive to the...

Argon Holds High-Power Potential For GaN Electronics - Feb 03, 2011
By implanting a buffer made of argon, researchers have created GaN devices that can handle...

 
http://www.cseurope.net/
 
 

latest features

 
 

 

 


GaN HEMTs: faster, more capable and better understood

Feb 16, 2011
Low-resistance channel contacts that speed transistors to record-breaking frequencies, localized boron doping that boosts blocking ...

Sematech builds III-V transistors on large silicon wafers

Feb 16, 2011
In order to become a successor to silicon CMOS technology, III-V transistors must be built ...

 
     
 
 

CS Europe conference - 22nd March 2011, Hilton, Frankfurt

 
 

 

 

What next for the Compound Semiconductor Industry  -  presented at CSEurope conference www.CSEurope.net


http://www.cseurope.net/

- What next for the Compound Semiconductor Industry  -  presented at CSEurope conference by Klaus H. Ploog, Pioneer of Molecular Beam Epitaxy (MBE)

- Role of GaN RF Power Technology for Tomorrow's Commercial and Defence Wireless Applications -  presented at CSEurope conference by Jeff Shealy, Division Vice President, RFMD

- How to make a state-of-the-art visible red laser, what its specs are, and what new markets it can target -  presented at CSEurope conference by Dr. Petteri Uusimaa, President, Modulight

- The urgency for the world to make power grids digital (smart grids) and photovoltaic developments for electricity production from solar -  presented at CSEurope conference by Jan-Gustav Werthen, Senior Director, Photovoltaics, JDSU

- 3G/4G requirements for wireless systems and the role GaAs and GaN devices will play in meeting these requirements -  presented at CSEurope conference by Dr Otto Berger, Corporate Advanced Technology Director, TriQuint Semiconductor, Inc

- What's needed from GaAs and GaN for tomorrow's wireless -  presented at CSEurope conference by Marc Rocchi, CEO, OMMIC

- Recent Progress on Green InGaN Laser Diode Development at OSRAM Opto Semiconductors -  presented at CSEurope conference by Alexander Bachmann, Marketing Engineer, OSRAM Opto Semiconductors GmbH

- What are the success factors for the deployment of Solid State Lighting? -  presented at CSEurope conference by Dr. Michael Fiebig, Director Marketing and Business Development Solid State Lighting, OSRAM Opto Semiconductors GmbH

- How will SiC power devices help getting a greener planet -  presented at CSEurope conference by Mats Reimark, CEO, TranSiC

- SiC Advances for Power Electronic Applications -  presented at CSEurope conference by Dr. Markus Behet, Europe Business Development Manager, Dow Corning Compound Semiconductor

- Future Proofing Networks with 100 Gigabit Optics -  presented at CSEurope conference by Scott Parker, Executive Vice President Sales and Marcom, Oclaro, Inc

- High performance compound semiconductors for infrastructure, automotive and defence applications -  presented at CSEurope conference by Dr. Ulf Meiners, Chief Technical Officer, UMS and Mark Murphy, Director Marketing, RF Power & Base, NXP

- Batch and single wafer processing strategies for HBLEDs -  presented at CSEurope conference by Dr Mike Cooke, Chief Technology Officer, Oxford Instruments Plasma Technology

- GaN power electronics: Market forecasts and industry status -  presented at CSEurope conference by Dr. Philippe ROUSSEL, Project manager Power Electronics and Compound Semiconductors, Yole Developpement

- Efficient High-Voltage GaN Devices and ICs for Next Generation Power Management Solutions -  presented at CSEurope conference by Dr. Ertugrul Sonmez, Business Development, MicroGaN GmbH

- Standardisation in compound semiconductors - an essential step for furthering the efficiency & profitability of the industry. -  presented at CSEurope conference by Roy Blunt, SEMI International Compound Standards

- GaN - meeting emissions regulations - presented at CSEurope conference by Mike Czerniak, Product Marketing Manager, Exhaust Gas Management, Edwards

- Engineered Substrates for future compound semiconductor devices presented at CSEurope conference by Dr. Thomas Uhrmann, Business Development Manager, EV Group (EVG)


CSEurope web site: www.CSEurope.net
Delegate booking: http://www.cseurope.net/register.php
Contact: info@cseurope.net

 

Agilent
 
Latest Magazine
 
 

Compound Semiconductor - Volume 17 Number 1 - January/February 2011

Digital Edtion

Download - PDF

Advertising Details

Subscribe for free
 
   
 
 
 

CORPORATE PARTNERS

 
 

 

 
 
 
 
 
 
 
 
 
 
 

 

 

© Copyright 2011. All rights reserved.


*unsubscribe*

*companyinfo*

In order to continue receiving these emails, you may need to add the domain address @compoundsemiconductor.net to your "safe list", "white list", or address book to ensure the emails are not blocked by any filters put in place by your Internet service provider.