ISO Compound Semiconductor - News

Gaas Labs acquires GaN RF innovator Nitronex

26th June 2012
With this move, Nitronex hopes to expand its market presence in the rapidly growing, high performance, GaN RF power device market using its gallium nitride on silicon technology

Gaas Labs, LLC, a private investment fund targeting the communications semiconductor market, has acquired privately-held Nitronex Corporation.

Nitronex designs and manufactures GaN based RF solutions for high performance applications in the defence, communications, cable TV, and industrial & scientific markets.

Founded in 1999 and headquartered in Durham, North Carolina, Nitronex provides high-performance GaN-on-Silicon semiconductor solutions using its proprietary SIGANTIC manufacturing process.

The Nitronex process combines the superior power, efficiency and bandwidth performance of GaN with the reliability, ease of use and low-cost advantages of industry standard silicon substrates. Financial terms of the transaction were not disclosed.

"We are excited to add Nitronex, a leading innovator in GaN-based RF solutions, to our portfolio of RF semiconductor companies," says John Ocampo, Co-Founder and President of Gaas Labs. We look forward to helping Nitronex further leverage its products and technologies and extend its RF market leadership."

Charles Shalvoy, CEO of Nitronex comments on the acquisition, "John Ocampo and Gaas Labs have demonstrated their ability to build and develop companies that realise their full growth potential. Partnering with Gaas Labs is an important milestone for Nitronex, which will enable us to deliver greater value to our customers in the rapidly growing, high performance, GaN RF power device market. We are thrilled to continue advancing our GaN-on-Silicon technology and expanding our market presence with Gaas Labs' backing and the aid of their strategic and operational expertise."

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