CURRENT NEWS
Texas Instruments expands its family of GaN FET driver ICs
Feb 02, 2012 The flexible low-side gate gallium nitride driver is suited for use with MOSFETs and GaN power field-effect transistors (FETs) in high-density power convertersThe new LM5114 drives GaN FETs and MOSFETs in low-side applications, such as synchronous rectifiers and power factor converters.
Together with the LM5113, one of the industry's first 100-V half-bridge GaN FET drivers, the family provides a complete isolated DC/DC conversion driver solution for high-power GaN FETs and MOSFETs used in high-performance telecom, networking and data centres applications.
The LM5114 drives both standard MOSFETs and GaN FETs by using independent sink and source outputs from a 5-V supply voltage. It features a high 7.6-A peak turn-off current capability needed in high-power applications where larger or paralleled FETs are used. The increased pull-down strength also enables it to drive GaN FETs properly. The independent source and sink outputs eliminate the need for a diode in the driver path and allows tight control of the rise and fall times.
TI is showcasing its FET driver family - the LM5114, the LM5113 in a new micro SMD package, the pin compatible 4-A/8-A UCC27511 low-side gate driver scheduled for release in March, and other products that help unlock the full benefits of GaN FET technology - in booth #401 at the Applied Power Electronics Conference and Expo (APEC) in Orlando, Florida, Feb. 6-8.
APEC is one of the industry's leading conferences for practicing power electronics professionals.
The LM5114 is available in volume now from TI and its authorised distributors. Offered in a 6-pin SOT-23 package and 6-pin LLP package with exposed pad, the suggested retail price is $0.58 in 1,000-unit quantities.
Samples and an evaluation module of the new GaN FET can be ordered at www.ti.com/lm5114-pr
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