Low-profile SiC MOSFET modules with multiple circuit topologies

Jan 26, 2012 Powerex is introducing two new split dual silicon carbide devices which are designed for use in high frequency applications power systems. They are ideal for use in fans, pumps ,UPS, high speed motor drives as well as electric vehicle and aviation systems
 Each QJD1210010 and QJD1210011 module consists of two MOSFET SiC transistors, with each transistor having a reverse-connected Cree Zero Recovery free-wheel SiC Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

 



 Rated at 100A/1200V, the SiC modules have a junction temperature of - 175°C and low internal inductance. Featuring high speed switching and a high power density, Powerex says they have industry leading RDS(on).

With 2 individual switches per module, the devices also demonstrate low switching losses, low capacitance and require a low drive. They also have a low profile and multiple circuit topologies, including independent; dual; in parallel; common collector; and common emitter.

The QJD1210010 has an isolated copper baseplate . For extended thermal cycle life, the QJD1210011 has an isolated AlSiC baseplate.

These MOSFET modules can be used in various high frequency applications, including energy saving power systems, such as fans, pumps and consumer appliances. They are also suited to high frequency type power systems, such as UPS, high speed motor drives, induction heating, welding and robotics.

The power systems can withstand high temperatures and as such, can be used in electric vehicle and aviation systems.

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