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Manganese doped ZnS is not a dilute magnetic semiconductor Feb 20, 2012
Results indicate that manganese doped zinc sulphide is paramagnetic, meaning it is only attracted when in the presence of an externally applied magnetic field CdSe QDs target neural activation Feb 09, 2012
A new technique using cadmium selenide quantum dots holds promise for better understanding of brain disorders Heat purifies quantum dots and nanorod lights Jan 31, 2012
When six month old CdSe/CdS nanocrystals in solution were subjected to ultraviolet light, luminescence increased by seven times Many bodies make one coherent burst of light Jan 31, 2012
Rice University researchers first to see superfluorescence from solid-state material, incorporating indium, gallium and arsenide quantum wells separated by gallium arsenide barriers Using the SEM to measure crystal structures Jan 25, 2012
A new procedure to measure SEM samples greatly improves its ability to measure the crystal structure of nanoparticles and extremely thin films including indium gallium nitride Cooling semiconductors with laser light Jan 23, 2012
When laser light impacts a gallium arsenide nanomembrane, some of the light is reflected and the light is reflected back again via a mirror. The light flies back and forth in this space and forms an optical resonator. High-power 532 nm compact green laser module developed Jan 23, 2012
Promise seen for applications in life sciences, precise measurements for industry and ultra-compact projectors A new candidate for next-generation power devices Jan 17, 2012
Gallium oxide transistors could rival silicon carbide and gallium nitride in power device applications ; they could be cheaper and save more energy when produced on mass One giant leap for IR technology Jan 11, 2012
Removing gallium from III-V type-II superlattice materials delivers a massive hike in minority carrier lifetime. Thanks to this, these superlattice detectors have the potential to start challenging expensive state-of-the-art HgCdTe infrared imagers Viewing GaN nanostructures in 3 dimensions Jan 11, 2012
Individual gallium nitride nanowires as small as 60 nanometres show piezoelectric behaviour in 3D up to six times of that exhibited by bulk GaN Cracking thin-solid GaN films into nanobelts Jan 10, 2012
IMRE researchers reveal a novel technique for fabricating gallium nitride based nanobelts with enhanced functions and applications Speeding up future electronics with graphene mixer Jan 03, 2012
The mixer provides new opportunities as it enables compact circuit technology, potential to reach high frequencies and integration with silicon technology InAs/InGaAs QDs for ultra-high speed communication Dec 28, 2011
Using a sandwiched sub-nano separator growth technique, indium arsenide / indium gallium arsenide quantum dots have been used to create a broad new band the 1.31-μm region Making GaAs etching easy Dec 23, 2011
The "MacEtch" wet etch solution ensures that only the areas touching metal are etched away, and high-aspect-ratio structures are formed as the metal sinks into the wafer. After etching , the metal can be cleaned from the surface without damaging it Sun-Believable paint-on solar cells Dec 23, 2011
Scientists say they have developed a solar paint which can be made cheaply and in large quantities. If the efficiency can be improved, they may be able to make a real difference in meeting energy needs in the future Terahertz pulse increases electron density in GaAs by a thousand Dec 22, 2011
These findings may lead to the development of ultra-high-speed transistors and high-efficiency photovoltaic cells using gallium arsenide Electrical resistance could be transformed Dec 20, 2011
Studies on electric friction in gallium arsenide could be useful in the future for designing more efficient and faster electronics and finding new tricks to reduce electrical resistance Photocurrent electrons overpower solar photons Dec 16, 2011
Researchers from NREL have developed a solar cell using PbSe quantum dots which exhibits multiple exciton generation GaN nanowires have a bright future Nov 30, 2011
Gallium nitride nanowires grown by PML scientists may only be a few tenths of a micron in diameter, but they promise a very wide range of applications, from new LEDs and diode lasers to ultra-small resonators, chemical sensors, and highly sensitive atomic probe tips. How to assemble InAs quantum dots Nov 28, 2011
Researchers at the University of Delaware have explored novel methods for assembling indium arsenide quantum dots for use in next generation computing devices and solar energy capture.

Displaying 1 - 20 of 95

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