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Solar cell interference reduced by moth eye reflection May 17, 2013
Mimicking nature can improve thin-film III-V solar cells and other optoelectronic devices GaAs nanowires harvest solar power May 12, 2013
A novel 3 dimensional geometry based on gallium arsenide enables trapping more light than planar structures, such as silicon solar devices, and with less material Monitoring UV exposure with the help of AlGaN Apr 30, 2013
Aluminium gallium nitride technology and can withstand continuous exposure to UV light without damage ZnO technology could revolutionise LEDs and UV lasers Apr 25, 2013
To make lasers and LEDs both n-type and p-type materials are used. Researchers have claimed that shedding excess energy at the p-n junction is what produces light in both these types of devices Cause of LED efficiency droop may be revealed Apr 24, 2013
Auger recombination could be responsible for the LED droop phenomenon SiC device could mitigate blackouts & prevent equipment damage Apr 22, 2013
New research indicates that siliicon carbide could prevent surges in the power grid Optimising the harvesting of sunlight Apr 15, 2013
A gallium nitride based single-photon emitter can secure communication LEDs invigorate the brain Apr 15, 2013
Implanting LEDs into the brain can stimulate peripheral nerves for pain management. LED devices in multiple colours may also be able to activate and control several neural circuits at once European GaN devices to go into orbit Apr 11, 2013
For the first time, a European gallium nitride based device will fly into space. It will monitor environmental occurrences in places such as the rain forest and the sea GaAs nanowire solar cells have massive potential Mar 26, 2013
Cylindrical III-V nanowire structures are predicted to have great potential in the development of solar cells, quantum computers and other electronic products Link solar-cells with dots and wires Mar 25, 2013
MIT researchers have improved the efficiency of a quantum-dot photovoltaic system by adding a forest of nanowires InP nanowires propel solar cells Mar 11, 2013
An indium phosphide nanowire solar cell can produce an effect per active surface unit several times greater than today’s silicon cells Novel process enriches solar cell efficiency Mar 07, 2013
Optimising colloidal quantum dot growth leads to significant improvements in capturing a broader range of the solar spectrum more effectively A novel spectroscopy to enhance optical devices Mar 06, 2013
A new technique developed by university researchers could lead to better LEDs, solar cells, and other devices that use layered nanomaterials Connecting indium antimonide quantum dots Feb 27, 2013
A novel spin technique has allowed scientists to move closer to creating what they say is the first viable high-speed quantum computer Lattice location determines trace nitrogen dopants in SiC Feb 25, 2013
A new technology is expected to contribute to the optimisation of the doping process of silicon carbide. The SC-XAFS techniques could also be applied to the analysis of other wide-gap semiconductors such as GaN (gallium nitride) GaAs quantum dots assemble themselves Feb 18, 2013
Quantum dots can self-assemble at the apex of a GaAs/AlGaAs (gallium arsenide/aluminium gallium arsenide) core/shell nanowire interface. This breakthrough could bolster quantum photonics and solar cell efficiency Transforming cell biology with tiny GaAs QD bioprobes Feb 15, 2013
A new quantum dot device composed of gallium arsenide and light-emitting crystal, marks a new age in the study and influence of living cells. The probe could be used for real-time sensing of specific proteins within cells and be adapted to sense biomolecules such as DNA or RNA New production method improves quantum-dot performance Feb 11, 2013
Altering the creation of CdSe-CdS QDs could enable everything from more efficient computer displays to enhanced biomedical testing Record-breaking antireflection coating on solar cells Feb 06, 2013
A new development could significantly improve the performance of solar cells, LEDs and photodetectors

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