FEATURES
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Defining the next steps for the Compound Semiconductor Industry
Jan 10, 2012
This year's conference is building on the success of 2011 and has developed to a two day conference with the main theme of 'defining the next steps for the compound semiconductor industry' and includes a keynote speech from Robert Chau, Intel Senior Fellow and director of transistor research and nanotechnology in Intel¹s Technology and Manufacturing Group.
III-V MOSFETs move into the third dimension
Dec 07, 2011
Wrapping a dielectric around an indium gallium arsenide channel could hold the key to scaling ICs beyond the 14 nm node.
Scaling sapphire underpins the solid-state lighting revolution
Dec 05, 2011
Flat, stress-free substrates with great surface quality will help to drive mass adoption of solid-state lighting. Such platforms reduce the impact of edge effects, allow the MOCVD deposition process to run more efficiently and ultimately cut the cost of LED chips, says Rubicon’s Raja Parvez.
Slashing temperatures for nitride growth
Dec 05, 2011
Deposition of nitride epilayer stacks by MOCVD requires high temperatures and plenty of ammonia. But these downsides can be sidestepped with an alternative growth process called migration enhanced afterglow,which has been developed by Canadian start-up Meaglow. Richard Stevenson reports.
Europe improves reliability of GaN microwave devices for space applications
Dec 02, 2011
Guaranteed access to leading edge GaN component technology is essential to maintain a competitive space industry in Europe. So companies and institutions are working together to build their own reliable, non-dependant,manufacturing supply chain for fabrication of space compatible GaN microwave transistors and integrated circuits, says Andrew Barnes and Fabio Vitobello from the European Space Agency and Joachim Daeubler, Klaus Hirche, Jouni Laetti and Mirko Rostewitz from Tesat-Spacecom.
Testing times
Dec 01, 2011
Keithley Instruments recently launched an electrical characterization tool that caters for the needs of producers of wide bandgap power electronics and high-brightness LEDs. David Ridsdale quizzes the company’s marketing director, Mark Cejer, about the capability of this new product.
Defects could account for LED droop’s temperature dependency
Nov 29, 2011
Calculations unveil two problems with the Auger theory for LED droop: This recombination mechanism is far too weak, and it has a temperature dependence that fails to tally with experimental results
Simulations enhance the development of power devices
Nov 24, 2011
Simulations hold the key to unlocking the potential of wideband gap semiconductor transistors with novel architectures, say Hugh Wong, Nelson Braga, Shiyang Tian and Ricardo Borges from Synopsys.
MicroGaN takes nitride transistors into the third dimension
Nov 03, 2011
Purchasers of power electronics want transistors and diodes that deliver SiC performance at silicon prices. Next year they should get their wish when MicroGaN launches a range of 600 V, GaN-on-silicon devices. Richard Stevenson investigates.
Research review: Dots bolster their telecom credentials
Oct 12, 2011
Quantum dots enable long-wavelength telecom lasers to combine sufficient output with incredibly low noise figures
Research Review: Atom probe unveils electron-induced indium clustering
Oct 12, 2011
Indium clustering in InGaN quantum wells stems from electron beam exposure, according to atom probe measurements
CPV market starts to gain momentum
Oct 12, 2011
Talk of a concentrating photovoltaic (CPV) market that is about to take off will court derision from some quarters, with sceptics arguing that they’ve heard it all before. But this industry has undoubtedly matured in recent times, and there is very good reason to believe that CPV deployments will rise and rise, offering a great opportunity for makers of triple-junction cells that can fulfil the wishes of their customers. Richard Stevenson investigates.
500 GHz transistors based on GaN … when and how?
Oct 11, 2011
To take nitride transistor speeds to a completely new level, researchers must work with novel designs employing either a new pairing of materials or the unconventional nitrogen-face, argue Dong Seup Lee and Tomas Palacios from Massachusetts Institute of Technology.
Displays will reignite the red laser market
Oct 04, 2011
The red laser is a great friend of the film buff. It has been the key ingredient for extracting the data from billions and billions of DVDs, and thanks to increases in output power, it promises to now enable the manufacture of brighter, more colourful displays, including three-dimensional ones employed in cinemas, says Modulight’s Marketing Manager Anca Guina.
NXP goes with GaN
Oct 04, 2011
Following several years of development with UMS and Fraunhofer Freiburg Institute, NXP is starting to launch a family of high-performance GaN-on-SiC power transistors that will complement its hugely successful silicon LDMOS products, says the company’s Director of Marketing for RF Power, Mark Murphy.
Droop draws the crowds at ICNS-9
Sep 26, 2011
Causes of LED droop and the progress of green lasers were two of the big topics at this year’s nitride conference. Richard Stevenson reports.
Research Review: QCLs with internal frequency doubling target gas sensing
Sep 21, 2011
Intra-cavity frequency doubling creates 3 mm QCLs from the pairing of GaInAs and AlInAs
Research Review: Freestanding a-plane substrate boosts HFET performance
Sep 20, 2011
Normally-off GaN HFETs deliver a drain current of 220 mA/mm when built on commercial, native a-plane substrates.
Research Review: Chemical etching improves thin-film LEDs
Sep 19, 2011
Photochemical etching with potassium hydroxide creates LEDs with reduced strain and higher efficiencies.
Research Review: Quaternary barrier cuts droop in UV LEDs
Sep 19, 2011
InAlGaN barrier boosts ultra-violet LED output at high current densities
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